Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR3 1600 MT/s
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Model: KVR16S11S8/4
EAN: 740617207781

Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR3 1600 MT/s

Manufacturer:
Kingston Technology
Kingston Technology ValueRAM , 4 GB, 1 x 4 GB, DDR3, 204-pin SO-DIMM
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Description

Kingston Technology ValueRAM . Component for: Laptop, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR3, Memory form factor: 204-pin SO-DIMM, CAS latency: 11
  • JEDEC 1.5V Power Supply
  • VDDQ = 1.5V
  • 800MHz fCK for 1600Mb/sec/pin
  • 8 independent internal banks
  • Programmable CAS latency: 11, 10, 9, 8, 7, 6, 5
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • 8-bit pre-fetch
  • Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS)
  • Bi-directional Differential Data Strobe
  • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº
  • Asynchronous Reset
  • PCB: Height 1.180” (30.00mm), double sided component

Product Properties

  • Model
  • KVR16S11S8/4
  • EAN
  • 740617207781
  • Bullet points
  • Point
  • 8 independent internal banks
    8-bit pre-fetch
    800MHz fCK for 1600Mb/sec/pin
    Asynchronous Reset
    Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº
    Bi-directional Differential Data Strobe
    Burst Length
    Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
    JEDEC 1.5V Power Supply
    On Die Termination using ODT pin
    PCB: Height 1.180” (30.00mm), double sided component
    Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
    Programmable CAS latency: 11, 10, 9, 8, 7, 6, 5
    VDDQ = 1.5V
  • Features
  • Buffered memory type
  • Unregistered (unbuffered)
  • CAS latency
  • 11
  • Component for
  • Laptop
  • Country of origin
  • Taiwan
  • ECC
  • No
  • Internal memory
  • 4 GB
  • Internal memory type
  • DDR3
  • Lead plating
  • Gold
  • Memory bus
  • 64 bit
  • Memory data transfer rate
  • 1600 MT/s
  • Memory form factor
  • 204-pin SO-DIMM
  • Memory layout (modules x size)
  • 1 x 4 GB
  • Memory ranking
  • 1
  • Memory voltage
  • 1.5 V
  • Module configuration
  • 512M x 64
  • Refresh row cycle time
  • 260 ns
  • Row active time
  • 35 ns
  • Row cycle time
  • 48.125 ns
  • Logistics data
  • Harmonized System (HS) code
  • 84733020
  • Operational conditions
  • Operating temperature (T-T)
  • 0 - 85 °C
  • Storage temperature (T-T)
  • -55 - 100 °C
  • Other features
  • Bus clock rate
  • 1600 MHz
  • Chips organisation
  • x8
  • Error indication
  • No
  • Internal memory
  • 4096 MB
  • Memory layout
  • 1 x 4096 MB
  • Packaging data
  • Package type
  • SO-DIMM
  • Weight & dimensions
  • Height
  • 30 mm
  • Width
  • 67.6 mm
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